Datasheet > BFY196_11

BFY196_11

更新时间： 2024-11-05 08:52:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管射频
页数	文件大小	规格书
4页	147K
描述
HiRel NPN Silicon RF Transistor

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BFY196_11 数据手册

BFY196

HiRel NPN Silicon RF Transistor

 HiRel Discrete and Microwave Semiconductor

 For low noise, high-gain amplifiers up to 2GHz.

 For linear broadband amplifiers

 Hermetically sealed microwave package

 f_T= 6,5 GHz

F = 3 dB at 2 GHz



Space Qualified

ESA/SCC Detail Spec. No.: 5611/006

Type Variant No. 07

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Type

Marking Ordering Code

see below

Pin Configuration Package

BFY196 (ql)

Micro-X1

(ql) Quality Level:

P: Professional Quality

H: High Rel Quality

S: Space Quality

ES: ESA Space Quality

(see order instructions for ordering example)

IFAG IMM RPD D HIR

1 of 4

V2, February 2011

12 3 4

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型号	品牌	获取价格	描述	数据表
BFY196ES	INFINEON	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, HERMETIC S
BFY196H	INFINEON	获取价格	HiRel NPN Silicon RF Transistor
BFY196P	INFINEON	获取价格	HiRel NPN Silicon RF Transistor
BFY196S	INFINEON	获取价格	HiRel NPN Silicon RF Transistor
BFY280	INFINEON	获取价格	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
BFY280ES	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 8V V(BR)CEO \| 10MA I(C) \| SOT-173VAR
BFY280H	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 8V V(BR)CEO \| 10MA I(C) \| SOT-173VAR
BFY280P	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 8V V(BR)CEO \| 10MA I(C) \| SOT-173VAR
BFY280S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 8V V(BR)CEO \| 10MA I(C) \| SOT-173VAR
BFY33	ONSEMI	获取价格	TRANSISTOR TRANSISTOR,BJT,NPN,30V V(BR)CEO,500MA I(C),TO-5, BIP General Purpose Small Sign