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BFY196ES PDF预览

BFY196ES

更新时间: 2024-11-05 13:05:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体半导体放大器晶体管射频微波
页数 文件大小 规格书
5页 120K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, MICRO-X1, 4 PIN

BFY196ES 技术参数

生命周期:Active包装说明:DISK BUTTON, O-CRDB-F4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.67
Is Samacsys:N最大集电极电流 (IC):0.1 A
基于收集器的最大容量:1 pF集电极-发射极最大电压:12 V
配置:SINGLE最小直流电流增益 (hFE):50
最高频带:L BANDJESD-30 代码:O-CRDB-F4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
极性/信道类型:NPN认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):6500 MHzBase Number Matches:1

BFY196ES 数据手册

 浏览型号BFY196ES的Datasheet PDF文件第2页浏览型号BFY196ES的Datasheet PDF文件第3页浏览型号BFY196ES的Datasheet PDF文件第4页浏览型号BFY196ES的Datasheet PDF文件第5页 
HiRel NPN Silicon RF Transistor  
BFY 196  
Features  
¥ HiRel Discrete and Microwave Semiconductor  
¥ For low noise, high gain amplifiers up to 2 GHz.  
¥ For linear broadband amplifiers  
¥ Hermetically sealed microwave package  
¥ fT = 6.5 GHz, F = 3 dB at 2 GHz  
¥ ESA Qualification pending  
Micro-X1  
ESD: Electrostatic discharge sensitive device, observe handling precautions!  
Type  
Marking  
Ordering Code  
Pin Configuration  
Package  
Micro-X1  
BFY 196 (ql)  
-
see below  
C
E
B
E
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1684  
H: High Rel Quality,  
S: Space Quality,  
Ordering Code: on request  
Ordering Code: on request  
(see Chapter Order Instructions for ordering example)  
Table 1  
Maximum Ratings  
Parameter  
Symbol  
VCEO  
VCES  
VCBO  
VEBO  
IC  
Limit Values  
Unit  
V
Collector-emitter voltage  
Collector-emitter voltage, VBE = 0  
Collector-base voltage  
Emitter-base voltage  
Collector current  
12  
20  
V
20  
V
2
V
100  
12 1)  
mA  
mA  
mW  
°C  
°C  
°C  
Base current  
IB  
Total power dissipation, TS £ 104 °C 2)  
Junction temperature  
Operating temperature range  
Storage temperature range  
Thermal Resistance  
Junction soldering point 2)  
1)  
Ptot  
700  
Tj  
200  
Top  
- 65 É + 200  
- 65 É + 200  
Tstg  
Rth JS  
< 135  
K/W  
The maximum permissible base current for VFBE measurements is 50 mA (spot measurement duration < 1 s).  
TS is measured on the collector lead at the soldering point to the pcb.  
2)  
Semiconductor Group  
1
Draft A03 1998-04-01  

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