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BFY193C(S)

更新时间： 2024-11-05 20:02:59

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BFY193C(S) 技术参数

BFY193C

HiRel NPN Silicon RF Transistor

 HiRel Discrete and Microwave Semiconductor

 For low noise, high-gain amplifiers up to 2GHz.

 For linear broadband amplifiers

 Specified 1/f Noise

 Hermetically sealed microwave package

 f_T= 8 GHz

F = 2.3 dB at 2 GHz



Space Qualified

ESA/SCC Detail Spec. No.: 5611/006

Type Variant No. 08

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Type

Marking Ordering Code

Pin Configuration

Package

BFY193C (ql)

(ql) Quality Level:

see below

Micro-X1

P: Professional Quality

H: High Rel Quality

S: Space Quality

ES: ESA Space Quality

(see order instructions for ordering example)

IFAG IMM RPD D HIR

1 of 4

V1, August 2011

12 3 4

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BFY193CSTR	INFINEON	获取价格	RF Small Signal Bipolar Transistor,
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BFY193F(P)	INFINEON	获取价格	HiRel Silicon Bipolar Transistor technology
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BFY193PZZZA1	INFINEON	获取价格	RF Small Signal Bipolar Transistor
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