Datasheet > BFY193C(P)

BFY193C(P)

更新时间： 2024-11-24 20:02:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
4页	187K
描述
RF Small Signal Bipolar Transistor,

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BFY193C(P) 技术参数

BFY193C

HiRel NPN Silicon RF Transistor

 HiRel Discrete and Microwave Semiconductor

 For low noise, high-gain amplifiers up to 2GHz.

 For linear broadband amplifiers

 Specified 1/f Noise

 Hermetically sealed microwave package

 f_T= 8 GHz

F = 2.3 dB at 2 GHz



Space Qualified

ESA/SCC Detail Spec. No.: 5611/006

Type Variant No. 08

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Type

Marking Ordering Code

Pin Configuration

Package

BFY193C (ql)

(ql) Quality Level:

see below

Micro-X1

P: Professional Quality

H: High Rel Quality

S: Space Quality

ES: ESA Space Quality

(see order instructions for ordering example)

IFAG IMM RPD D HIR

1 of 4

V1, August 2011

12 3 4

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型号	品牌	获取价格	描述	数据表
BFY193C(S)	INFINEON	获取价格	Transistor
BFY193CESZZZA1	INFINEON	获取价格	RF Small Signal Bipolar Transistor
BFY193CPZZZA1	INFINEON	获取价格	RF Small Signal Bipolar Transistor
BFY193CSTR	INFINEON	获取价格	RF Small Signal Bipolar Transistor,
BFY193ES	INFINEON	获取价格	HiRel NPN Silicon RF Transistor
BFY193F(ES)	INFINEON	获取价格	HiRel Silicon Bipolar Transistor technology
BFY193F(P)	INFINEON	获取价格	HiRel Silicon Bipolar Transistor technology
BFY193H	INFINEON	获取价格	HiRel NPN Silicon RF Transistor
BFY193P	INFINEON	获取价格	HiRel NPN Silicon RF Transistor
BFY193PZZZA1	INFINEON	获取价格	RF Small Signal Bipolar Transistor