Datasheet > BFQ67_08

BFQ67_08

更新时间： 2024-11-21 06:42:03

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
12页	282K
描述
Silicon NPN Planar RF Transistor

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中文翻译

获取价格

数据手册

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BFQ67_08 数据手册

Not for new design, this product will be obsoleted soon

BFQ67 / BFQ67R / BFQ67W

Vishay Semiconductors

Silicon NPN Planar RF Transistor

SOT23

Features

• Small feedback capacitance

• Low noise figure

• High transition frequency

SOT23

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

Low noise small signal amplifiers up to 2 GHz. This

transistor has superior noise figure and associated

gain performance at UHF, VHF and microwave fre-

quencies.

SOT323

19150

Mechanical Data

Typ: BFQ67

Electrostatic sensitive device.

Observe precautions for handling.

Case: SOT-23 Plastic case

Weight: approx. 8.0 mg

Marking: V2

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Typ: BFQ67R

Case: SOT-23 Plastic case

Weight: approx. 8.0 mg

Marking: R67

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Typ: BFQ67W

Case: SOT-323 Plastic case

Weight: approx. 6.0 mg

Marking: WV2

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_CBO

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_CEO

V_EBO

I_C

2.5

°C

Total power dissipation

Junction temperature

Storage temperature range

T_amb≤ 60 °C

P_tot

T_j

200

150

T_stg

- 65 to + 150

°C

Document Number 85022

Rev. 1.6, 08-Sep-08

www.vishay.com

12 3 4 5 6 7...12

中文翻译

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