BFQ67F

更新时间： 2024-11-06 06:42:03

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
5页	87K
描述
Silicon NPN Planar RF Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BFQ67F 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.06	最大集电极电流 (IC)：	0.05 A
配置：	Single	最小直流电流增益 (hFE)：	65
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.2 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

BFQ67F 数据手册

^{Not for new design, this product will be obsoleted soon}BFQ67F

Vishay Semiconductors

Silicon NPN Planar RF Transistor

Description

The main purpose of this bipolar transistor is broad-

band amplification up to 2 GHz. In the space-saving

3-pin surface-mount SOT-490 package electrical per-

formance and reliability are taken to a new level cov-

ering a smaller footprint on PC boards than previous

packages. In addition to space savings, the SOT-490

provides a higher level of reliability than other 3-pin

packages, such as more resistance to moisture. Due

to the short length of its leads the SOT-490 is also

reducing package inductances resulting in some bet-

16867

Electrostatic sensitive device.

Observe precautions for handling.

ter electrical performance. All of these aspects make

this device an ideal choice for demanding RF applica-

tions.

Applications

Low noise small signal broadband applications, such

as in satellite TV tuners, RF modules for wireless and

mobile communications up to 2 GHz.

Features

• Low noise figure

Mechanical Data

Typ: BFQ67F

Case: SOT-490 Plastic case

Weight: approx. 2.5 mg

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

• High transition frequency

• High power gain

• Small feedback capacitance

• Flat-lead SMD package

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Parts Table

Part

Marking

Package

SOT-490

BFQ67F

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_CBO

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_CEO

V_EBO

I_C

2.5

°C

Total power dissipation

Junction temperature

Storage temperature range

T_amb≤ 60 °C

P_tot

T_j

200

150

T_stg

- 65 to + 150

°C

Document Number 85097

Rev. 1.4, 05-Sep-08

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与BFQ67F相关器件

型号	品牌	获取价格	描述	数据表
BFQ67-GS08	TEMIC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Millimeter Wave Band, Silicon,
BFQ67-GS18	TEMIC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Millimeter Wave Band, Silicon,
BFQ67R	VISHAY	获取价格	Silicon NPN Planar RF Transistor
BFQ67T	NXP	获取价格	NPN 8 GHz wideband transistor
BFQ67-T	NXP	获取价格	TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN, BIP RF Smal
BFQ67T/R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 50MA I(C) \| SOT-23
BFQ67TRL	NXP	获取价格	TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
BFQ67TRL	YAGEO	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
BFQ67TRL13	YAGEO	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
BFQ67TRL13	NXP	获取价格	TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

与BFQ67F相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

BFQ67F

BFQ67F 技术参数

BFQ67F 数据手册

与BFQ67F相关器件

与BFQ67F相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BFQ67F

BFQ67F 技术参数

BFQ67F 数据手册

与BFQ67F相关器件

与BFQ67F相关文章

您还可以找

您在本页遇到什么问题？