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BFQ67R PDF预览

BFQ67R

更新时间: 2024-11-05 22:32:03
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
12页 188K
描述
Silicon NPN Planar RF Transistor

BFQ67R 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.06
Is Samacsys:N最大集电极电流 (IC):0.05 A
配置:Single最小直流电流增益 (hFE):60
JESD-609代码:e3最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)Base Number Matches:1

BFQ67R 数据手册

 浏览型号BFQ67R的Datasheet PDF文件第2页浏览型号BFQ67R的Datasheet PDF文件第3页浏览型号BFQ67R的Datasheet PDF文件第4页浏览型号BFQ67R的Datasheet PDF文件第5页浏览型号BFQ67R的Datasheet PDF文件第6页浏览型号BFQ67R的Datasheet PDF文件第7页 
BFQ67/BFQ67R/BFQ67W  
Vishay Telefunken  
Silicon NPN Planar RF Transistor  
Electrostatic sensitive device.  
Observe precautions for handling.  
Applications  
Low noise small signal amplifiers up to 2 GHz. This  
transistor has superior noise figure and associated  
gain performance at UHF, VHF and microwave fre-  
quencies.  
Features  
Small feedback capacitance  
Low noise figure  
High transition frequency  
1
1
13 581  
13 581  
94 9280  
9510527  
2
3
3
2
BFQ67 Marking: V2  
BFQ67R Marking: R67  
Plastic case (SOT 23)  
Plastic case (SOT 23)  
1 = Collector, 2 = Base, 3 = Emitter  
1 = Collector, 2 = Base, 3 = Emitter  
1
13 652  
13 570  
2
3
BFQ67W Marking: WV2  
Plastic case (SOT 323)  
1 = Collector, 2 = Base, 3 = Emitter  
Document Number 85022  
Rev. 3, 20-Jan-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (12)  

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