生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | DISK BUTTON, O-CRDB-F4 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 最大集电极电流 (IC): | 0.15 A |
基于收集器的最大容量: | 1.2 pF | 集电极-发射极最大电压: | 16 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 50 |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | O-CRDB-F4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 200 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 8 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | RADIAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 7000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFQ63 | NJSEMI |
获取价格 |
TO-72 | |
BFQ64 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 200MA I(C) | TO-236 | |
BFQ645 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 40MA I(C) | MICRO-X | |
BFQ65 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | SOT-37 | |
BFQ66 | NXP |
获取价格 |
TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
BFQ67 | NXP |
获取价格 |
NPN 8 GHz wideband transistor | |
BFQ67 | VISHAY |
获取价格 |
Silicon NPN Planar RF Transistor | |
BFQ67_08 | VISHAY |
获取价格 |
Silicon NPN Planar RF Transistor | |
BFQ67_15 | JMNIC |
获取价格 |
NPN 8 GHz wideband transistor | |
BFQ67_2015 | JMNIC |
获取价格 |
NPN 8 GHz wideband transistor |