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BF720T1/D PDF预览

BF720T1/D

更新时间: 2024-01-30 18:04:33
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 74K
描述
NPN Silicon Transistor

BF720T1/D 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-261AA包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
Factory Lead Time:8 weeks风险等级:0.48
外壳连接:COLLECTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-261AA
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):60 MHzBase Number Matches:1

BF720T1/D 数据手册

 浏览型号BF720T1/D的Datasheet PDF文件第2页浏览型号BF720T1/D的Datasheet PDF文件第3页浏览型号BF720T1/D的Datasheet PDF文件第4页浏览型号BF720T1/D的Datasheet PDF文件第5页浏览型号BF720T1/D的Datasheet PDF文件第6页浏览型号BF720T1/D的Datasheet PDF文件第7页 
ON Semiconductort  
BF720T1  
NPN Silicon Transistor  
ON Semiconductor Preferred Device  
MAXIMUM RATINGS  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Symbol  
Value  
300  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
mAdc  
Watts  
°C  
NPN SILICON  
TRANSISTOR  
SURFACE MOUNT  
V
CEO  
V
CBO  
V
CER  
V
EBO  
300  
300  
5.0  
4
I
C
100  
1
2
3
Total Power Dissipation up to T = 25°C  
P
D
1.5  
A
Storage Temperature Range  
Junction Temperature  
DEVICE MARKING  
DC  
T
stg  
–65 to +150  
150  
CASE 318E-04, STYLE 1  
SOT–223 (TO-261AA)  
T
J
°C  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance  
from Junction-to-Ambient  
R
83.3  
°C/W  
θ
JA  
(1)  
COLLECTOR 2,4  
BASE  
1
EMITTER 3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristics  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
Collector-Emitter Breakdown Voltage  
V
V
V
V
300  
300  
300  
5.0  
10  
Vdc  
Vdc  
Vdc  
Vdc  
nAdc  
(BR)CEO  
(BR)CBO  
(BR)CER  
(BR)EBO  
(I = 1.0 mAdc, I = 0)  
C
B
Collector-Base Breakdown Voltage  
(I = 100 µAdc, I = 0)  
C
E
Collector-Emitter Breakdown Voltage  
(I = 100 µAdc, R = 2.7 k)  
C
BE  
Emitter-Base Breakdown Voltage  
(I = 10 µAdc, I = 0)  
E
C
Collector-Base Cutoff Current  
(V = 200 Vdc, I = 0)  
I
CBO  
CB  
E
Collector–Emitter Cutoff Current  
(V = 250 Vdc, R = 2.7 k)  
I
CER  
50  
10  
nAdc  
µAdc  
CE  
BE  
(V = 200 Vdc, R = 2.7 k, T = 150°C)  
CE  
BE  
J
2
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in .  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 4  
BF720T1/D  

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