BDX34CWD

更新时间： 2024-11-16 13:05:55

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
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6页	138K
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数据手册

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BDX34CWD 数据手册

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by BDX33B/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for general purpose and low speed switching applications.

•

High DC Current Gain — h = 2500 (typ.) at I = 4.0

FE C

Collector–Emitter Sustaining Voltage at 100 mAdc

= 80 Vdc (min.) — BDX33B, 34B

= 100 Vdc (min.) — BDX33C, 34C

CEO(sus)

•

Low Collector–Emitter Saturation Voltage

= 2.5 Vdc (max.) at I = 3.0 Adc — BDX33B, 33C/34B, 34C

Monolithic Construction with Build–In Base–Emitter Shunt resistors

TO–220AB Compact Package

*Motorola Preferred Device

CE(sat)

•

DARLINGTON

10 AMPERE

COMPLEMENTARY

SILICON

MAXIMUM RATINGS

POWER TRANSISTORS

80–100 VOLTS

70 WATTS

BDX33B

BDX34B

BDX33C

BDX34C

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

100

5.0

Collector Current — Continuous

Peak

Base Current

0.25

Adc

Total Device Dissipation

@ T = 25 C

0.56

Watts

W/ C

Derate above 25 C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

CASE 221A–06

TO–220AB

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.78

C/W

θJC

100

120

140

160

, CASE TEMPERATURE (

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

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与BDX34CWD相关器件

型号	品牌	获取价格	描述	数据表
BDX34D	TRSYS	获取价格	NPN/PNP PLASTIC POWER TRANSISTORS
BDX34D	POINN	获取价格	Transistor de puissance PNP darlington
BDX34D-6200	RENESAS	获取价格	10A, 120V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDX34D-6203	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plas
BDX34D-6226	RENESAS	获取价格	10A, 120V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDX34D-6255	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plas
BDX34D-6258	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plas
BDX34D-6261	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plas
BDX34D-6263	RENESAS	获取价格	10A, 120V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDX34D-6264	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plas