生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.68 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 10 A |
集电极-发射极最大电压: | 45 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 750 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | PNP |
功耗环境最大值: | 70 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | VCEsat-Max: | 2.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BDX34-DR6274 | RENESAS |
获取价格 |
Power Bipolar Transistor, 10A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
BDX34-DR6280 | RENESAS |
获取价格 |
Power Bipolar Transistor, 10A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
BDX34D-S | BOURNS |
获取价格 |
Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plas | |
BDX34-S | TRSYS |
获取价格 |
Power Bipolar Transistor, 10A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
BDX35 | NJSEMI |
获取价格 |
Trans GP BJT NPN 60V 5A 3-Pin TO-126 | |
BDX35 | NXP |
获取价格 |
NPN switching transistors | |
BDX35 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
BDX35 | COMSET |
获取价格 |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS | |
BDX35 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
BDX35B | NJSEMI |
获取价格 |
Trans GP BJT NPN 60V 5A 3-Pin TO-126 |