Datasheet > BDX36

BDX36

更新时间： 2024-11-16 06:41:59

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	111K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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BDX36 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BDX36

DESCRIPTION

·With TO-126 package

·High current (Max: 5A)

APPLICATIONS

·High current switching in power

applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter -base voltage

Collector current (DC)

Collector current-Peak

Base current-Peak

CONDITIONS

VALUE

UNIT

Open emitter

Open base

120

Open collector

I_CM

I_BM

P_T

Total power dissipation

Junction temperature

Storage temperature

T_mb≤75ꢀ

ꢀ

T_j

150

-65~150

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

100

UNIT

K/W

R_{th j-a}

Thermal resistance from junction to ambient

R_{th j-mb}

Thermal resistance from junction to mounting base

12 3

中文翻译

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