BDX53/A/B/C
Hammer Drivers, Audio Amplifiers Applications
Power Liner and Switching Applications
•
•
Power Darlington TR
Complement to BDX54, BDX54A, BDX54B and BDX54C respectively
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
Collector-Base Voltage : BDX53
45
60
80
V
V
V
V
CBO
: BDX53A
: BDX53B
: BDX53C
100
V
Collector-Emitter Voltage : BDX53
45
60
80
V
V
V
V
CEO
: BDX53A
: BDX53B
: BDX53C
100
V
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
5
V
A
EBO
I
I
I
8
12
C
A
CP
B
0.2
A
P
Collector Dissipation (T =25°C)
60
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 65 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
(sus)
* Collector-Emitter Sustaining Voltage
CEO
: BDX53
I
= 100mA, I = 0
45
60
80
V
V
V
V
C
B
: BDX53A
: BDX53B
: BDX53C
100
I
I
Collector Cut-off Current : BDX53
V
V
V
V
= 45V, I = 0
200
200
200
200
µA
µA
µA
µA
CBO
CEO
EBO
CB
CB
CB
CB
E
: BDX53A
: BDX53B
: BDX53C
= 60V, I = 0
E
= 80V, I = 0
E
= 100V, I = 0
E
Collector Cut-off Current : BDX53
V
V
V
V
= 22V, I = 0
500
500
500
500
µA
µA
µA
µA
CE
CE
CE
CE
B
: BDX53A
: BDX53B
: BDX53C
= 30V, I = 0
B
= 40V, I = 0
B
= 50V, I = 0
B
I
Emitter Cut-off Current
V
V
= 5V, I = 0
2
mA
EB
CE
C
h
* DC Current Gain
= 3V, I = 3A
750
FE
C
V
V
V
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Parallel Diode Forward Voltage
I
I
= 3A, I = 12mA
2
2.5
2.5
V
V
CE
BE
F
C
C
B
(sat)
= 3A, I = 12mA
B
I = 3A
1.8
2.5
V
V
F
I = 8A
F
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000