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BDX53A

更新时间： 2024-11-16 21:03:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 143K
描述
8A, 60V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN

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中文翻译

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BDX53A 技术参数

生命周期：Active零件包装代码：SFM
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.38最大集电极电流 (IC)：8 A
集电极-发射极最大电压：60 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：750JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：NPN
最大功率耗散 (Abs)：60 W表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
VCEsat-Max：2 VBase Number Matches：1

BDX53A 数据手册

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BDX53B, BDX53C (NPN),  
BDX54B, BDX54C (PNP)  
Plastic Medium-Power  
Complementary Silicon  
Transistors  
http://onsemi.com  
These devices are designed for general−purpose amplifier and  
low−speed switching applications.  
DARLINGTON  
8 AMPERE  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
80−100 VOLTS, 65 WATTS  
Features  
• High DC Current Gain −  
h
FE  
= 2500 (Typ) @ I = 4.0 Adc  
C
• Collector Emitter Sustaining Voltage − @ 100 mAdc  
V
V
= 80 Vdc (Min) − BDX53B, 54B  
= 100 Vdc (Min) − BDX53C, 54C  
CEO(sus)  
CEO(sus)  
• Low Collector−Emitter Saturation Voltage −  
V
V
= 2.0 Vdc (Max) @ I = 3.0 Adc  
C
CE(sat)  
4
= 4.0 Vdc (Max) @ I = 5.0 Adc  
CE(sat)  
C
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors  
• Pb−Free Packages are Available*  
TO−220AB  
CASE 221A  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
STYLE 1  
1
2
Collector−Emitter Voltage  
V
CEO  
Vdc  
3
BDX53B, BDX54B  
BDX53C, BDX54C  
80  
100  
Collector−Base Voltage  
V
CB  
Vdc  
MARKING DIAGRAM  
& PIN ASSIGNMENT  
BDX53B, BDX54B  
BDX53C, BDX54C  
80  
100  
Emitter−Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
4
Collector Current − Continuous  
− Peak  
I
8.0  
12  
C
Collector  
Base Current  
I
B
0.2  
Adc  
Total Device Dissipation @ T = 25°C  
P
D
65  
0.48  
W
W/°C  
C
Derate above 25°C  
BDX5xyG  
AY WW  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
1
3
Characteristic  
Symbol  
Max  
70  
Unit  
°C/W  
°C/W  
Base  
Emitter  
2
Collector  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
R
1.92  
BDX5xy = Device Code  
x = 3 or 4  
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
y = B or C  
Assembly Location  
Year  
Work Week  
Pb−Free Package  
A
Y
WW  
G
=
=
=
=
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
October, 2011 − Rev. 14  
BDX53B/D  
1234567

中文翻译

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