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BDX53B PDF预览

BDX53B

更新时间: 2024-11-15 22:30:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
6页 172K
描述
Plastic Medium-Power Complementary Silicon Transistors

BDX53B 数据手册

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Order this document  
by BDX53B/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general–purpose amplifier and low–speed switching applications.  
High DC Current Gain —  
= 2500 (Typ) @ I = 4.0 Adc  
Collector Emitter Sustaining Voltage — @ 100 mAdc  
h
FE  
C
V
V
= 80 Vdc (Min) — BDX53B, 54B  
= 100 Vdc (Min) — BDX53C, 54C  
CEO(sus)  
CEO(sus)  
Low Collector–Emitter Saturation Voltage —  
V
V
= 2.0 Vdc (Max) @ I = 3.0 Adc  
CE(sat)  
CE(sat)  
C
DARLINGTON  
8 AMPERE  
COMPLEMENTARY  
SILICON  
= 4.0 Vdc (Max) @ I = 5.0 Adc  
C
Monolithic Construction with Built–In Base–Emitter Shunt Resistors  
TO–220AB Compact Package  
POWER TRANSISTORS  
80100 VOLTS  
65 WATTS  
MAXIMUM RATINGS  
BDX53B  
BDX54B  
BDX53C  
BDX54C  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
80  
80  
100  
100  
V
CB  
V
EB  
5.0  
Collector Current — Continuous  
Peak  
I
C
8.0  
12  
Base Current  
I
B
0.2  
Adc  
Total Device Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
60  
0.48  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
stg  
65 to +150  
C
J
CASE 221A–06  
TO–220AB  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
70  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
θJA  
70  
θJC  
T
T
C
A
4.0 80  
3.0 60  
T
C
2.0 40  
1.0 20  
0
T
A
0
20  
40  
60  
80  
100  
C)  
120  
140  
160  
T, TEMPERATURE (  
°
Figure 1. Power Derating  
REV 7  
Motorola, Inc. 1995

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