Datasheet > BDX53B_07

BDX53B_07

更新时间： 2024-11-16 06:41:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管达林顿晶体管
页数	文件大小	规格书
7页	87K
描述
Complementary power Darlington transistors

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中文翻译

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数据手册

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BDX53B_07 数据手册

BDX53B - BDX53C

BDX54B - BDX54C

Complementary power Darlington transistors

Features

■ Good h linearity

■ High f frequency

■ Monolithic Darlington configuration with

integrated antiparallel collector-emitter diode

Application

■ Audio amplifiers

TO-220

■ Linear and switching industrial equipment

Description

The devices are manufactured in planar base

island technology with monolithic Darlington

configuration.

Figure 1. Internal schematic diagram

R2 typ.= 150 Ω

R1 typ.= 10 kΩ

Table 1.

Device summary

Order code

Marking

Package

Packaging

BDX53B

BDX53C

BDX54B

BDX54C

BDX53B

BDX53C

BDX54B

BDX54C

TO-220

Tube

October 2007

Rev 4

1/7

www.st.com

12 3 4 5 6 7

中文翻译

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BDX53BAU	ONSEMI	获取价格	8A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN