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BDX53B_07

更新时间： 2024-02-11 03:13:32
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
7页 101K
描述
Plastic Medium-Power Complementary Silicon Transistors

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中文翻译

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BDX53B_07 数据手册

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Operating and Storage Junction  
Temperature Range  
T , T  
J
                                                                                                                      
65 to  
                                                                                                                                 
150  
°C  
BDX53B, BDX53C (NPN),  
BDX54B, BDX54C (PNP)  
Plastic Medium-Power  
Complementary Silicon  
Transistors  
http://onsemi.com  
These devices are designed for general-purpose amplifier and  
low-speed switching applications.  
DARLINGTON  
8 AMPERE  
Features  
•ꢀHigh DC Current Gain -  
FE  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
80ꢀ-ꢀ100 VOLTS, 65 WATTS  
h
= 2500 (Typ) @ I = 4.0 Adc  
C
•ꢀCollector Emitter Sustaining Voltage - @ 100 mAdc  
V
V
= 80 Vdc (Min) - BDX53B, 54B  
= 100 Vdc (Min) - BDX53C, 54C  
CEO(sus)  
CEO(sus)  
•ꢀLow Collector-Emitter Saturation Voltage -  
V
V
= 2.0 Vdc (Max) @ I = 3.0 Adc  
C
= 4.0 Vdc (Max) @ I = 5.0 Adc  
CE(sat)  
4
CE(sat)  
C
•ꢀMonolithic Construction with Built-In Base-Emitter Shunt Resistors  
•ꢀPb-Free Packages are Available*  
TO-220AB  
CASE 221A  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
1
2
Collector-Emitter Voltage  
V
CEO  
Vdc  
3
BDX53B, BDX54B  
BDX53C, BDX54C  
80  
100  
Collector-Base Voltage  
V
CB  
Vdc  
MARKING DIAGRAM  
& PIN ASSIGNMENT  
BDX53B, BDX54B  
BDX53C, BDX54C  
80  
100  
Emitter-Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
4
Collector  
Collector Current - Continuous  
- Peak  
I
8.0  
12  
C
Base Current  
I
B
0.2  
Adc  
Total Device Dissipation @ T = 25°C  
P
D
65  
0.48  
W
W/°C  
C
Derate above 25°C  
BDX5xyG  
AY WW  
stg  
THERMAL CHARACTERISTICS  
1
Base  
3
Emitter  
Characteristic  
Symbol  
Max  
70  
Unit  
°C/W  
°C/W  
2
Collector  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
R
q
JA  
R
q
JC  
1.92  
BDX5xy = Device Code  
x = 3 or 4  
y = B or C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
A
=
=
=
=
Assembly Location  
Year  
Work Week  
Y
WW  
G
Pb-Free Package  
*For additional information on our Pb-Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
November, 2007 - Rev. 13  
1
Publication Order Number:  
BDX53B/D  
1234567

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