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BDX53A

更新时间： 2024-09-22 22:30:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 驱动器音频放大器
页数 文件大小 规格书
4页 44K
描述
Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications

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BDX53A 数据手册

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BDX53/A/B/C  
Hammer Drivers, Audio Amplifiers Applications  
Power Liner and Switching Applications  
•
•
Power Darlington TR  
Complement to BDX54, BDX54A, BDX54B and BDX54C respectively  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage : BDX53  
45  
60  
80  
V
V
V
V
CBO  
: BDX53A  
: BDX53B  
: BDX53C  
100  
V
Collector-Emitter Voltage : BDX53  
45  
60  
80  
V
V
V
V
CEO  
: BDX53A  
: BDX53B  
: BDX53C  
100  
V
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current  
5
V
A
EBO  
I
I
I
8
12  
C
A
CP  
B
0.2  
A
P
Collector Dissipation (T =25°C)  
60  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: BDX53  
I
= 100mA, I = 0  
45  
60  
80  
V
V
V
V
C
B
: BDX53A  
: BDX53B  
: BDX53C  
100  
I
I
Collector Cut-off Current : BDX53  
V
V
V
V
= 45V, I = 0  
200  
200  
200  
200  
µA  
µA  
µA  
µA  
CBO  
CEO  
EBO  
CB  
CB  
CB  
CB  
E
: BDX53A  
: BDX53B  
: BDX53C  
= 60V, I = 0  
E
= 80V, I = 0  
E
= 100V, I = 0  
E
Collector Cut-off Current : BDX53  
V
V
V
V
= 22V, I = 0  
500  
500  
500  
500  
µA  
µA  
µA  
µA  
CE  
CE  
CE  
CE  
B
: BDX53A  
: BDX53B  
: BDX53C  
= 30V, I = 0  
B
= 40V, I = 0  
B
= 50V, I = 0  
B
I
Emitter Cut-off Current  
V
V
= 5V, I = 0  
2
mA  
EB  
CE  
C
h
* DC Current Gain  
= 3V, I = 3A  
750  
FE  
C
V
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
* Parallel Diode Forward Voltage  
I
I
= 3A, I = 12mA  
2
2.5  
2.5  
V
V
CE  
BE  
F
C
C
B
(sat)  
= 3A, I = 12mA  
B
I = 3A  
1.8  
2.5  
V
V
F
I = 8A  
F
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
1234

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 		Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
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 		Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
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 		Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BDX53AL MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BDX53AN MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti

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