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BDW84D PDF预览

BDW84D

更新时间: 2024-11-19 12:51:11
品牌 Logo 应用领域
COMSET 晶体晶体管局域网
页数 文件大小 规格书
3页 122K
描述
PNP SILICON DARLINGTONS POWER TRANSISTORS

BDW84D 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.6
Base Number Matches:1

BDW84D 数据手册

 浏览型号BDW84D的Datasheet PDF文件第2页浏览型号BDW84D的Datasheet PDF文件第3页 
PNP BDW84 – BDW84A – BDW84B  
BDW84C – BDW84D  
PNP SILICON DARLINGTONS POWER TRANSISTORS  
They are silicon epitaxial-base PNP power monolithic Darlington transistor mounted in  
Jedec TO-218 plastic package.  
They are intended for use in power linear and switching applications.  
The complementary are BDW83, BDW83A, BDW83B, BDW83C, BDW83D  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEO  
Ratings  
Value  
Unit  
BDW84  
-45  
-60  
-80  
-100  
-120  
-45  
BDW84A  
BDW84B  
BDW84C  
BDW84D  
BDW84  
Collector-Emitter Voltage IB = 0  
V
BDW84A  
BDW84B  
BDW84C  
BDW84D  
-60  
-80  
-100  
-120  
-5  
VCBO  
Collector- Emitter Voltage IE = 0  
V
VEBO  
IC  
IB  
Emitter-Base Voltage  
Collector Current  
Base Current  
IC = 0  
V
A
A
-15  
-0.5  
25°C case temperatur  
25°C free aire temperatur  
150  
3.5  
Pt  
Total Power Dissipation  
W
TJ  
TStg  
Junction Temperature  
Storage Temperature  
-65 to +150  
-65 to +150  
°C  
°C  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RthJC  
RthJA  
Junction to Case Thermal Resistance  
Junction to Free Air Thermal Resistance  
0.83  
35.7  
°C/W  
23/10/2012  
COMSET SEMICONDUCTORS  
1 | 3  

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