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BDW47 PDF预览

BDW47

更新时间: 2024-11-14 08:51:59
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 43K
描述
Silicon PNP Power Transistors

BDW47 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.55
Base Number Matches:1

BDW47 数据手册

 浏览型号BDW47的Datasheet PDF文件第2页浏览型号BDW47的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
BDW47  
DESCRIPTION  
·With TO-220C package  
·Complement to type BDW42  
·DARLINGTON  
·High DC current gain  
·Low collector saturation voltage  
APPLICATIONS  
·For general purpose and low speed  
switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current-DC  
Base current  
CONDITIONS  
VALUE  
-100  
-100  
-5  
UNIT  
V
Open emitter  
Open base  
V
Open collector  
V
-15  
A
IB  
-0.5  
A
PD  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
85  
W
Tj  
150  
Tstg  
-55~150  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-C  
Thermal resistance junction to case  
1.47  
/W  

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