是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SIP |
包装说明: | PLASTIC PACKAGE-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.07 |
最大集电极电流 (IC): | 4 A | 集电极-发射极最大电压: | 45 V |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 750 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | MATTE TIN (315) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 1 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD675AG | ONSEMI |
获取价格 |
Plastic Medium−Power Silicon NPN Darlingtons |
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BD675ALEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ |
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BD675AS | FAIRCHILD |
获取价格 |
NPN Epitaxial Silicon Transistor |
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BD675AS | ONSEMI |
获取价格 |
Medium Power NPN Darlington Bipolar Power Transistor |
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BD675ATIN/LEAD | CENTRAL |
获取价格 |
Power Bipolar Transistor, |
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BD675G | ONSEMI |
获取价格 |
Plastic Medium−Power Silicon NPN Darlingtons |
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BD675LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ |
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BD676 | ISC |
获取价格 |
Silicon PNP Darligton Power Transistors |
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BD676 | MOTOROLA |
获取价格 |
Plastic Medium-Power Silicon PNP Darlingtons |
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BD676 | ONSEMI |
获取价格 |
DARLINGTON POWER TRANSISTORS PNP SILICON |
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