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BD675G PDF预览

BD675G

更新时间: 2024-09-24 04:09:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管放大器局域网
页数 文件大小 规格书
3页 130K
描述
Plastic Medium−Power Silicon NPN Darlingtons

BD675G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-225AA包装说明:ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.55最大集电极电流 (IC):4 A
集电极-发射极最大电压:45 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):750JEDEC-95代码:TO-225AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):40 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BD675G 数据手册

 浏览型号BD675G的Datasheet PDF文件第2页浏览型号BD675G的Datasheet PDF文件第3页 
Transys  
Electronics  
L
I M I T E D  
NPN PLASTIC POWER DARLINGTON TRANSISTORS  
BD675, BD675A  
BD677, BD677A  
BD679, BD679A  
BD681, BD683  
TO126  
Plastic Package  
E
C
B
Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684  
ABSOLUTE MAXIMUM RATINGS  
DESCRIPTION  
SYMBOL  
BD675  
BD675A  
677  
679 681  
683  
UNITS  
677A 679A  
VCBO  
VCEO  
Collector Base Voltage  
Collector Emitter Voltage  
45  
45  
60  
60  
80 100  
80 100  
120  
120  
V
V
V
A
A
VEBO  
Emitter Base Voltage  
Collector Current  
Base Current  
5
4
IC  
IB  
0.1  
Total Power Dissipation@ Tc=25 oC  
PD  
40  
0.32  
W
W / ºC  
ºC  
Derate above 25OC  
Tj,Tstg  
Operating & Storage Junction  
Temperature Range  
- 55 to + 150  
THERMAL RESISTANCE  
From Junction to case  
Rth(j-c)  
3.13  
ºC/W  
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOLTEST CONDITION  
MIN  
MAX  
UNITS  
VCEO  
*
IC =50mA, IB =0  
Collector Emitter Voltage  
BD675/BD675A  
BD677/BD677A  
BD679/BD679A  
BD681  
45  
60  
V
80  
100  
120  
BD683  
µA  
mA  
ICEO VCE=half rated VCEO,IB=0  
ICBO VCB =rated VCBO, IE=0  
Collector-Cut off Current  
Emitter cut off Current  
500  
0.2  
ICBO VCB =rated VCBO, IE=0  
2.0  
2.0  
TC=100OC  
mΑ  
IEBO VEB =5V, IC =0  

BD675G 替代型号

型号 品牌 替代类型 描述 数据表
BD675 ONSEMI

完全替代

DARLINGTON POWER TRANSISTORS NPN SILICON
BD677G ONSEMI

类似代替

中等功率 NPN 达林顿双极功率晶体管
BD675AG ONSEMI

类似代替

Plastic Medium−Power Silicon NPN Darlingtons

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