Datasheet > BD676

BD676

更新时间： 2024-09-24 08:51:43

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
3页	41K
描述
Silicon PNP Darligton Power Transistors

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中文翻译

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技术参数
数据手册

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BD676 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.54
Base Number Matches：	1

BD676 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Darligton Power Transistors

BD676/BD678/BD680

DESCRIPTION

·With TO-126 package

·Complement to type BD675/BD677/BD679

·DARLINGTON

·High DC current gain

APPLICATIONS

·For use as output devices in

complementary general–purpose

amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

-45

UNIT

BD676

BD678

BD680

BD676

BD678

BD680

V_CBO

Collector-base voltage

Open emitter

-60

-80

-45

V_CEO

Collector-emitter voltage

Open base

-60

-80

V_EBO

I_C

Emitter -base voltage

Collector current

Open collector

-5

-4

I_B

Base current

-0.1

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

150

-55~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

MAX

UNIT

R_{th j-c}

3.13

℃/W

12 3

中文翻译

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