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BD676A PDF预览

BD676A

更新时间: 2024-01-01 03:44:36
品牌 Logo 应用领域
SAVANTIC 晶体晶体管开关局域网
页数 文件大小 规格书
3页 102K
描述
Silicon PNP Power Transistors

BD676A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SIP
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.16
最大集电极电流 (IC):4 A集电极-发射极最大电压:45 V
配置:DARLINGTON最小直流电流增益 (hFE):750
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN (315)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):1 MHzBase Number Matches:1

BD676A 数据手册

 浏览型号BD676A的Datasheet PDF文件第2页浏览型号BD676A的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
BD676A/678A/680A/682  
DESCRIPTION  
·With TO-126 package  
·Complement to type BD675A/677A/679A/681  
·DARLINGTON  
·High DC current gain  
APPLICATIONS  
·For medium power linear and  
switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings (Ta=25ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-45  
UNIT  
BD676A  
BD678A  
BD680A  
BD682  
-60  
VCBO  
Collector-base voltage  
Open emitter  
V
-80  
-100  
-45  
BD676A  
BD678A  
BD680A  
BD682  
-60  
VCEO  
Collector-emitter voltage  
Open base  
V
-80  
-100  
-5  
VEBO  
IC  
ICM  
IB  
Emitter -base voltage  
Collector current  
Open collector  
V
A
A
A
W
-4  
Collector current-Peak  
Base current  
-6  
-0.1  
40  
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
150  
-65~150  
Tstg  

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