Datasheet > BD5431EFS_11

BD5431EFS_11

更新时间： 2024-11-03 08:51:35

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
5页	153K
描述
Silicon monolithic integrated circuits

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BD5431EFS_11 数据手册

1/4

STRUCTURE:

PRODUCT:

Silicon monolithic integrated circuits

Stereo Class-D Power Amplifier For Speaker

TYPE:

BD5431EFS

HTSSOP-A44

PACKAGE:

FEATURES:

1) Differential Analog / PWM inputs

2) High efficiency and low heat generation eliminates external heat-sinks

3) Eliminates pop noise generated when the power supply goes on/off, or when the power supply is

suddenly shut off

4) High quality muting performance is realized by using the soft-switching technology

5) Incorporates a master/slave function that enables synchronous operation when several

units are used simultaneously

6) Allows the internal PWM sampling clock frequency to be adjusted

○Absolute maximum ratings (Ta=25℃)

Item Symbol

Limit

+20

Unit

Conditions

Pin7、8、15、16、29、30、37、38、40

※1 ※2

Supply voltage

Vcc

2.0

4.5

※3

Power dissipation

※4

Input voltage for signal pin

Input voltage for control pin

Input voltage for clock pin

Operating temperature range

Storage temperature range

Maximum junction temperature

V_IN

-0.2 ～ +7.2

-0.2 ～ Vcc+0.2

-0.2 ～ +7.2

-40 ～ +85

-55 ～ +150

+150

Pin1、2、3、4 ※1

Pin20、24 ※1

Pin23 ※1

V_CONT

V_OSC

Topr

Tstg

Tjmax

℃

※1 The voltage that can be applied, based on GND(Pin11, 12, 33, 34, 43)

※2 Do not, however exceed Pd and Tjmax=150℃.

※3 70mm×70mm×1.6mm, FR4, 1-layer glass epoxy board (Copper on bottom layer 0%)

Derating in done at 16mW/℃ for operating above Ta＝25℃. There are thermal vias on the board.

※4 70mm×70mm×1.6mm, FR4, 2-layer glass epoxy board (Copper on bottom layer 100%)

Derating in done at 36mW/℃ for operating above Ta＝25℃. There are thermal vias on the board.

○Operating conditions (Ta＝25℃)

Item

Symbol

Vcc

Limit

Unit

Conditions

Pin7、8、15、16、29、30、37、38、40

※1

Supply voltage

+10 ～ +16.5

4 ～ 16

R_L

Load impedance

※5

※5 Do not, however exceed Pd.

※

No radiation-proof design

REV. B

12 3 4 5

中文翻译

下载PDF

与BD5431EFS_11相关器件

型号	品牌	获取价格	描述	数据表
BD543A	POINN	获取价格	NPN SILICON POWER TRANSISTORS
BD543A	BOURNS	获取价格	NPN SILICON POWER TRANSISTORS
BD543A	ISC	获取价格	Silicon NPN Power Transistors
BD543A	SAVANTIC	获取价格	Silicon NPN Power Transistors
BD543A	NJSEMI	获取价格	Trans GP BJT NPN 60V 8A 3-Pin(3+Tab) TO-220
BD543A-S	BOURNS	获取价格	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD543B	ISC	获取价格	Silicon NPN Power Transistors
BD543B	BOURNS	获取价格	NPN SILICON POWER TRANSISTORS
BD543B	POINN	获取价格	NPN SILICON POWER TRANSISTORS
BD543B	SAVANTIC	获取价格	Silicon NPN Power Transistors