Datasheet > BD544

BD544

更新时间： 2024-11-25 22:39:31

品牌	Logo	应用领域
POINN		晶体晶体管
页数	文件大小	规格书
6页	88K
描述
PNP SILICON POWER TRANSISTORS

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中文翻译

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数据手册

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BD544 数据手册

BD544, BD544A, BD544B, BD544C

PNP SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

●

Designed for Complementary Use with the

BD543 Series

TO-220 PACKAGE

(TOP VIEW)

●

70 W at 25°C Case Temperature

8 A Continuous Collector Current

10 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD544

-40

BD544A

BD544B

BD544C

BD544

-60

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

V_CBO

-80

-100

-40

BD544A

BD544B

BD544C

-60

V_CEO

-80

-100

Emitter-base voltage

V_EBO

I_C

-5

Continuous collector current

Peak collector current (see Note 1)

-8

-10

I_CM

P_tot

T_A

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Operating free air temperature range

°C

-65 to +150

260

Operating junction temperature range

T_j

Storage temperature range

T_stg

T_L

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p£ 0.3 ms, duty cycle £ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

中文翻译

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