5秒后页面跳转
BD543C PDF预览

BD543C

更新时间: 2024-11-26 04:09:15
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
5页 104K
描述
NPN SILICON POWER TRANSISTORS

BD543C 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.79
外壳连接:COLLECTOR最大集电极电流 (IC):8 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):70 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BD543C 数据手册

 浏览型号BD543C的Datasheet PDF文件第2页浏览型号BD543C的Datasheet PDF文件第3页浏览型号BD543C的Datasheet PDF文件第4页浏览型号BD543C的Datasheet PDF文件第5页 
BD543, BD543A, BD543B, BD543C  
NPN SILICON POWER TRANSISTORS  
Designed for Complementary Use with the  
BD544 Series  
TO-220 PACKAGE  
(TOP VIEW)  
70 W at 25°C Case Temperature  
8 A Continuous Collector Current  
10 A Peak Collector Current  
1
2
3
B
C
E
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD543  
40  
BD543A  
BD543B  
BD543C  
BD543  
60  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
VCBO  
V
80  
100  
40  
BD543A  
BD543B  
BD543C  
60  
VCEO  
V
80  
100  
Emitter-base voltage  
VEBO  
IC  
5
V
A
Continuous collector current  
Peak collector current (see Note 1)  
8
ICM  
Ptot  
Ptot  
TA  
10  
70  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Operating free air temperature range  
W
W
°C  
°C  
°C  
°C  
2
-65 to +150  
-65 to +150  
-65 to +150  
260  
Operating junction temperature range  
Tj  
Storage temperature range  
Tstg  
TL  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.  
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
JUNE 1973 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

与BD543C相关器件

型号 品牌 获取价格 描述 数据表
BD543C-S BOURNS

获取价格

暂无描述
BD543-S BOURNS

获取价格

Power Bipolar Transistor, 8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD544 BOURNS

获取价格

PNP SILICON POWER TRANSISTORS
BD544 POINN

获取价格

PNP SILICON POWER TRANSISTORS
BD544 TRSYS

获取价格

PNP SILICON POWER TRANSISTORS
BD544 ISC

获取价格

isc Silicon PNP Power Transistors
BD544 NJSEMI

获取价格

Trans GP BJT PNP 40V 8A 3-Pin(3+Tab) TO-220
BD544 FOSHAN

获取价格

TO-220
BD5444EFV ROHM

获取价格

Analog Input / Single End Output Class-D Speaker Amplifier
BD5444EFV-E2 ROHM

获取价格

Analog Input / Single End Output Class-D Speaker Amplifier