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BD544C PDF预览

BD544C

更新时间: 2024-11-03 06:41:55
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 122K
描述
isc Silicon PNP Power Transistors

BD544C 数据手册

 浏览型号BD544C的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistors  
BD544/A/B/C  
DESCRIPTION  
·70 W at 25°C Case Temperature  
·Complement to Type BD543/A/B/C  
·8 A Continuous Collector Current  
APPLICATIONS  
·Designed for high power audio amplifier applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
-40  
UNIT  
BD544  
BD544A  
BD544B  
BD544C  
BD544  
-60  
VCBO  
Collector-Base Voltage  
V
-80  
-100  
-40  
BD544A  
BD544B  
BD544C  
-60  
VCEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
-80  
-100  
-5  
VEBO  
IC  
V
A
A
Collector Current-Continuous  
Collector Current-Peak  
-8  
ICM  
-10  
Collector Power Dissipation  
@ TC=25℃  
70  
PC  
W
Collector Power Dissipation  
@ Ta=25℃  
2
TJ  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
/W  
/W  
Thermal Resistance,Junction to Case  
4.17  
Rth j-c  
Thermal Resistance,Junction to Ambient  
62.5  
Rth j-a  
isc Websitewww.iscsemi.cn  

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