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BD545A-S PDF预览

BD545A-S

更新时间: 2024-11-03 13:02:11
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管
页数 文件大小 规格书
5页 104K
描述
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, FM-3

BD545A-S 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.63
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):15 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):10
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BD545A-S 数据手册

 浏览型号BD545A-S的Datasheet PDF文件第2页浏览型号BD545A-S的Datasheet PDF文件第3页浏览型号BD545A-S的Datasheet PDF文件第4页浏览型号BD545A-S的Datasheet PDF文件第5页 
BD545, BD545A, BD545B, BD545C  
NPN SILICON POWER TRANSISTORS  
Designed for Complementary Use with the  
BD546 Series  
SOT-93 PACKAGE  
(TOP VIEW)  
85 W at 25°C Case Temperature  
B
C
E
1
2
3
15 A Continuous Collector Current  
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRAAA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD545  
40  
BD545A  
BD545B  
BD545C  
BD545  
60  
Collector-base voltage (IE = 0)  
VCBO  
V
80  
100  
40  
BD545A  
BD545B  
BD545C  
60  
Collector-emitter voltage (IB = 0) (see Note 1)  
VCEO  
V
80  
100  
Emitter-base voltage  
VEBO  
IC  
5
15  
V
Continuous collector current  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Operating free air temperature range  
Ptot  
Ptot  
TA  
85  
W
W
°C  
°C  
°C  
°C  
3.5  
-65 to +150  
-65 to +150  
-65 to +150  
260  
Operating junction temperature range  
Tj  
Storage temperature range  
Tstg  
TL  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. These values apply when the base-emitter diode is open circuited.  
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.  
JUNE 1973 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

BD545A-S 替代型号

型号 品牌 替代类型 描述 数据表
BD709 STMICROELECTRONICS

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