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BD709 PDF预览

BD709

更新时间: 2024-11-25 22:27:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管局域网
页数 文件大小 规格书
6页 100K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

BD709 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SFM
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.75最大集电极电流 (IC):12 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:75 W最大功率耗散 (Abs):75 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
VCEsat-Max:1 VBase Number Matches:1

BD709 数据手册

 浏览型号BD709的Datasheet PDF文件第2页浏览型号BD709的Datasheet PDF文件第3页浏览型号BD709的Datasheet PDF文件第4页浏览型号BD709的Datasheet PDF文件第5页浏览型号BD709的Datasheet PDF文件第6页 
BD707/709/711  
BD708/712  
COMPLEMENTARY SILICON POWER TRANSISTORS  
COMPLEMENTARY PNP - NPN DEVICES  
APPLICATION  
LINEARAND SWITCHING INDUSTRIAL  
EQUIPMENT  
DESCRIPTION  
The BD707, BD709 and BD711 are silicon  
Epitaxial-Base NPN power transistors in Jedec  
TO-220 plastic package. They are intented for  
use in power linear and switching applications.  
3
2
1
The BD707 and BD711 complementary PNP  
types are BD708 and BD712 respectively.  
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
BD707  
BD708  
60  
BD709  
BD711  
BD712  
100  
VCBO  
VCER  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
80  
V
V
60  
80  
100  
60  
80  
100  
V
5
V
12  
A
ICM  
Collector Peak Current  
18  
A
IB  
Base Current  
Total Dissipation at Tc 25 oC  
Storage Temperature  
5
75  
A
Ptot  
Tstg  
Tj  
W
oC  
oC  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative  
1/6  
September 1999  

BD709 替代型号

型号 品牌 替代类型 描述 数据表
BD245C-S BOURNS

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Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
BDW53D-S BOURNS

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Power Bipolar Transistor, 4A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD545A-S BOURNS

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Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,

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