Datasheet > BD545

BD545

更新时间： 2024-11-25 22:39:31

品牌	Logo	应用领域
POINN		晶体晶体管
页数	文件大小	规格书
6页	91K
描述
NPN SILICON POWER TRANSISTORS

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数据手册

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BD545 数据手册

BD545, BD545A, BD545B, BD545C

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

●

Designed for Complementary Use with the

BD546 Series

SOT-93 PACKAGE

(TOP VIEW)

●

85 W at 25°C Case Temperature

15 A Continuous Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD545

BD545A

BD545B

BD545C

BD545

Collector-base voltage (I_E= 0)

V_CBO

100

BD545A

BD545B

BD545C

Collector-emitter voltage (I_B= 0) (see Note 1)

V_CEO

100

Emitter-base voltage

V_EBO

I_C

Continuous collector current

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Operating free air temperature range

P_tot

T_A

°C

3.5

-65 to +150

260

Operating junction temperature range

T_j

Storage temperature range

T_stg

T_L

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. These values apply when the base-emitter diode is open circuited.

2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

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