BD544B

更新时间： 2024-11-03 04:09:15

品牌	Logo	应用领域
伯恩斯 - BOURNS		晶体晶体管
页数	文件大小	规格书
5页	104K
描述
PNP SILICON POWER TRANSISTORS

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中文翻译

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数据手册

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BD544B 数据手册

BD544, BD544A, BD544B, BD544C

PNP SILICON POWER TRANSISTORS

●

Designed for Complementary Use with the

BD543 Series

TO-220 PACKAGE

(TOP VIEW)

●

70 W at 25°C Case Temperature

8 A Continuous Collector Current

10 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD544

-40

BD544A

BD544B

BD544C

BD544

-60

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

V_CBO

-80

-100

-40

BD544A

BD544B

BD544C

-60

V_CEO

-80

-100

Emitter-base voltage

V_EBO

I_C

-5

Continuous collector current

Peak collector current (see Note 1)

-8

-10

I_CM

P_tot

T_A

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Operating free air temperature range

°C

-65 to +150

260

Operating junction temperature range

T_j

Storage temperature range

T_stg

T_L

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4 5

中文翻译

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