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STRUCTURE
TYPE
Silicon Monolithic Integrated Circuit
Regulator IC for Memory termination
PRODUCT SERIES
FEATURES
BD3533HFN
・Incorporates a push-pull power supply for termination (VTT)
・Incorporates a reference voltage circuit(VREF)
・Compatible with Dual Channel (DDR-Ⅱ)
○
ABSOLUTE MAXIMUM RATINGS (Ta=100℃)
Parameter
Input Voltage
Symbol
VCC
VEN
Limit
7 *1*2
Unit
V
Enable Input Voltage
Termination Input Voltage
VDDQ Reference Voltage
Output Current
7 *1*2
V
VTT_IN
VDDQ
ITT
7 *1*2
7 *1*2
V
V
1
A
Power Dissipation1
Pd1
630 *3
1350 *4
1750 *5
-30~+100
-55~+150
+150
mW
mW
mW
℃
Power Dissipation2
Pd2
Power Dissipation3
Pd3
Operating Temperature Range
Storage Temperature Range
Topr
Tstg
℃
Maximum Junction Temperature
Tjmax
℃
*1 Should not exceed Pd.
*2 Instantaneous surge voltage, back electromotive force and voltage under less than 10% duty cycle.
*3 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 0.2%) θja=198.4℃/W
*4 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 7%) θja=92.4℃/W
*5 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 65%) θja=71.4℃/W
○
RECOMMENDED OPERATING CONDITIONS (Ta=25℃)
PARAMETER
Input Voltage
SYMBOL
VCC
MIN
2.7
MAX
5.5
UNIT
V
V
V
V
Termination Input Voltage
VDDQ Reference Voltage
Enable Input Voltage
VTT_IN
VDDQ
VEN
1.0
5.5
1.0
2.75
5.5
-0.3
★
No radiation-resistant design is adopted for the present product.
The Japanese version of this document is the official specification.
This translated version is intended only as a reference, to aid in understanding the official version.
If there are any differences between the original and translated versions of this document, the official Japanese language version takes priority.
REV. E