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BD35395FJ-M PDF预览

BD35395FJ-M

更新时间: 2023-09-03 20:40:08
品牌 Logo 应用领域
罗姆 - ROHM 驱动动态存储器双倍数据速率稳压器
页数 文件大小 规格书
19页 1699K
描述
BD35395FJ-M是适用于JEDEC标准DDR1/2/3/3L-SDRAM的终端稳压器。内置N-MOSFET,漏型/源型最大可提供1A电流的线性电源。内部的OP-AMP采用高速设计,实现了优异的瞬态响应特性。为驱动内部的N-MOSFET,需要3.3V或5.0V偏压电源。为确保JEDEC规定的电压精度,本产品拥有独立的基准输入引脚(VDDQ)和独立的反馈引脚(VTTS),实现了优异的输出电压精度和负载调整率。Power Supply Reference BoardFor Xilinx’s FPGA Spartan-7

BD35395FJ-M 数据手册

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Datasheet  
Regulator IC Series for Automotive  
Termination Regulator  
for DDR-SDRAMs  
BD35395FJ-M  
General Description  
Key Specifications  
BD35395FJ-M is a termination regulator compatible with  
JEDEC DDR1/2/3/3L-SDRAM, which functions as a linear  
power supply incorporating an N-channel MOSFET and  
provides a sink/source current capability up to 1A  
respectively. A built-in high-speed OP-AMP specially  
designed offers an excellent transient response.  
Requires 3.3 volts or 5.0 volts as a bias power supply to  
drive the N-channel MOSFET. Has an independent  
reference voltage input pin (VDDQ) and an independent  
feedback pin (VTTS) to maintain the accuracy in voltage  
required by JEDEC, and offers an excellent output voltage  
accuracy and load regulation.  
Input Voltage Range:  
2.7V to 5.5V  
1.0V to 5.5V  
1.0V to 2.75V  
-1.01.0A(Max)  
0.35Ω(Typ)  
Termination Input Voltage:  
VDDQ Reference Voltage:  
Output Current:  
Upper Side ON Resistance:  
Lower Side ON Resistance:  
Standby Current:  
0.35Ω(Typ)  
0.5mA (Typ)  
Operating Temperature Range: -40°C to +105°C  
Package(s)  
W(Typ) x D(Typ) x H(Max)  
4.90mm x 6.00mm x 1.65mm  
SOP-J8  
Features  
Incorporates a push-pull power supply for  
termination (VTT).  
Incorporates an enabler.  
Incorporates an under voltage lockout (UVLO).  
Employs SOP-J8 package : 4.9×6.0×1.65(mm).  
Incorporates a thermal shutdown protector (TSD).  
Operates with input voltage from 2.7 to 5.5 volts.  
Compatible with Dual Channel  
(DDR1,DDR2,DDR3/DDR3L)  
Incorporates PGOOD function.  
Applications  
Power supply for DDR1/2/3/3L SDRAM  
SOP-J8  
Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays  
.www.rohm.com  
TSZ02201-0G5G1AN00020-1-2  
30.Nov.2017 Rev.003  
© 2013 ROHM Co., Ltd. All rights reserved.  
1/16  
TSZ22111 14 001  

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