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BD3539HFN PDF预览

BD3539HFN

更新时间: 2024-02-29 01:22:36
品牌 Logo 应用领域
罗姆 - ROHM 光电二极管
页数 文件大小 规格书
12页 402K
描述
Terminator Support Circuit, PDSO8, 3 X 2.90 MM, 0.60 MM HEIGHT, ROHS COMPLIANT, HSON-8

BD3539HFN 数据手册

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High-performance Regulator IC Series for PCs  
Termination Regulators  
for DDR-SDRAMs  
BD3539HFN, BD3539FVM, BD3539NUV  
No.09030EBT03  
Description  
BD3539HFN/FVM/NUV is a termination regulator compatible with JEDEC DDR-SDRAM, which functions as a linear power  
supply incorporating an N-channel MOSFET and provides a sink/source current capability up to 1A respectively. A built-in  
high-speed OP-AMP specially designed offers an excellent transient response. Requires 3.3 volts or 5.0 volts as a bias  
power supply to drive the N-channel MOSFET. Has an independent reference voltage input pin (VDDQ) and an  
independent feedback pin (VTTS) to maintain the accuracy in voltage required by JEDEC, and offers an excellent output  
voltage accuracy and load regulation. Also has a reference power supply output pin (VREF) for DDR-SDRAM or a memory  
controller. When EN pin turns to “Low”, VTT output becomes “Hi-Z” while VREF output is kept unchanged, compatible with  
“Self Refresh” state of DDR-SDRAM.  
Features  
1) Incorporates a push-pull power supply for termination (VTT)  
2) Incorporates a reference voltage circuit (VREF)  
3) Incorporates an enabler  
4) Incorporates an undervoltage lockout (UVLO)  
5) Employs HSON8 package :2.9×3.0×0.6(mm) : BD3539HFN  
6) Employs MSOP8 package : 2.9×4.0×0.9(mm) : BD3539FVM  
7) Employs VSON8 package : 2.0×3.0×0.6(mm) : BD3539NUV  
8) Incorporates a thermal shutdown protector (TSD)  
9) Operates with input voltage from 2.7 to 5.5 volts  
10) Compatible with Dual Channel (DDR3)  
Applications  
Power supply for DDR3- SDRAM  
Absolute maximum ratings  
Parameter  
BD3539HFN  
BD3539FVM  
BD3539NUV  
Symbol  
VCC  
VEN  
VTT_IN  
VDDQ  
ITT  
Unit  
V
Input Voltage  
7*1*2  
Enable Input Voltage  
Termination Input Voltage  
VDDQ Reference Voltage  
Output Current  
7*1*2  
V
7*1*2  
V
7*1*2  
V
1
A
270.0*7  
616.1*8  
1770.5*9  
1790.8*10  
Power Dissipation1  
Power Dissipation2  
Power Dissipation3  
Power Dissipation4  
Operating Temperature Range  
Storage Temperature Range  
Pd1  
630*3  
1350*4  
1750*5  
-
437.5*6  
mW  
mW  
mW  
mW  
-
-
-
Pd2  
Pd3  
Pd4  
Topr  
-30+100  
-55+150  
+150  
Tstg  
Maximum Junction Temperature  
Tjmax  
*1 Should not exceed Pd.  
*2 Instantaneous surge voltage, back electromotive force and voltage under less than 10% duty cycle.  
*3 With Ta25when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 0.2%), θja=198.4/W  
*4 With Ta25when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 7%), θja=92.4/W  
*5 With Ta25when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 65%), θja=71.4/W  
*6 With Ta25(With no heat sink) θja=286/W  
*7 With Ta25when mounting a 70mm×70mm×1.6mm glass-epoxy substrate board (when don’t mounted on a heat radiation board ), θja=463/W  
*8 With Ta25when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board,θja=202.9/W  
*9 With Ta25when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 4-layers board, (copper foil area : 6.28mm2)  
which has copper foil in each layer, θja=70.6/W  
*10 With Ta25when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 4-layers board, (copper foil area : 5505mm2)  
which has copper foil in each layer, θja=69.8/W  
www.rohm.com  
© 2009 ROHM Co., Ltd. All rights reserved.  
2009.04 - Rev.B  
1/12  

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