Datasheet > BD3538HFN-E2

BD3538HFN-E2

更新时间： 2022-02-26 11:12:02

品牌	Logo	应用领域
罗姆 - ROHM		动态存储器双倍数据速率
页数	文件大小	规格书
20页	1742K
描述
Termination Regulators for DDR-SDRAMs

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BD3538HFN-E2 数据手册

Datasheet

Termination Regulators for DDR-SDRAMs

BD3538F BD3538HFN

General Description

Key Specifications

BD3538F/HFN is a termination regulator that complies

with JEDEC requirements for DDR-SDRAM. This

linear power supply uses a built-in N-channel MOSFET

and high-speed OP-AMPS specially designed to

 Termination Input Voltage Range:

 VCC Input Voltage Range:

 VDDQ Reference Voltage Range:

 Output Voltage:

1.0V to 5.5V

2.7V to 5.5V

1.0V to 2.75V

1/2 x V_VDDQV(Typ)

1.0A (Max)

provide excellent transient response. It has

 Output Current:

sink/source current capability of up to 1A and has a

power supply bias requirements of 3.3V to 5.0V for

driving the N-channel MOSFET. By employing an

 High side FET O-Resistance:

 Low side FET ON-Resistance:

 Standby Current:

0.4Ω(Typ)

0.5mA (Typ)

independent reference voltage input (VDDQ) and

 Operating Temperature Range:

-40°C to +105°C

feedback pin (VTTS), this termination regulator

provides excellent output voltage accuracy and load

regulation as required by JEDEC standards.

Additionally, BD3538 has a reference power supply

Packages

W(Typ) x D(Typ) x H(Max)

output (VREF) for DDR-SDRAM or

a memory

controller. Unlike the VTT output that goes to “Hi-Z”

state, the VREF output is kept unchanged when EN

input is changed to “Low”, making this IC suitable for

DDR-SDRAM under “Self Refresh” state.

SOP8

Features

5.00mm x 6.20mm x 1.71mm



Incorporates a push-pull power supply for

termination (VTT)



Incorporates a reference voltage circuit (VREF)

Incorporates an enabler

Incorporates an undervoltage lockout (UVLO)

Incorporates a thermal shutdown protector (TSD)

Compatible with Dual Channel (DDR-II)

Applications

HSON8

2.90mm x 3.00mm x 0.60mm

Power supply for DDR I / II - SDRAM

Typical Application Circuit, Block Diagram

VTT_IN

VCC

VDDQ

VCC

VTT_IN

VDDQ

VCC

UVLO

SOFT

Reference

VTT

Block

TSD

VTT

TSD

UVLO

VCC

UVLO

TSD

UVLO

TSD

Thermal

Protection

Enable

VTTS

½ x

VDDQ

VREF

GND

○Product structure：Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays

www.rohm.com

TSZ22111・14・001

TSZ02201-0J2J0A900980-1-2

02.Nov.2015 Rev.001

1/16

12 3 4 5 6 7...20

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