5秒后页面跳转
BD3100S PDF预览

BD3100S

更新时间: 2024-11-23 12:50:03
品牌 Logo 应用领域
强茂 - PANJIT 肖特基二极管
页数 文件大小 规格书
3页 124K
描述
THROUGH HOLE SCHOTTKY BARRIER RECTIFIERS

BD3100S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.68
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:75 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BD3100S 数据手册

 浏览型号BD3100S的Datasheet PDF文件第2页浏览型号BD3100S的Datasheet PDF文件第3页 
BD340S~BD3200S  
THROUGH HOLE SCHOTTKY BARRIER RECTIFIERS  
3.0 Ampere  
CURRENT  
VOLTAGE 40 to 200 Volts  
FEATURES  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O  
• For surface mounted applications  
• Low profile package  
• Built-in strain relief  
• Low power loss, High efficiency  
• High surge capacity  
• For use in low voltage high frequency inverters, free wheeling, and  
polarity protection applications  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: TO-252 molded plastic  
Terminals: Solder plated, solderable per MIL-STD-750,Method 2026  
• Polarity: As marking  
• Weight: 0.0104 ounces, 0.297 grams.  
MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.  
BD340S  
BD345S BD350S BD360S BD380S BD390S BD3100S BD3150S BD3200S  
PARAMETER  
SYMBOL  
VRRM  
UNITS  
V
Maximum Recurrent Peak Reverse Voltage  
40  
45  
50  
60  
80  
90  
100  
150  
200  
Maximum RMS Voltage  
VRM S  
VD C  
28  
40  
31.5  
45  
35  
50  
42  
60  
56  
80  
63  
90  
70  
105  
150  
140  
200  
V
V
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Current (See Figure 1)  
IF (AV )  
IF S M  
VF  
3.0  
75  
A
A
Peak Forward Surge Current :8.3ms single half sine-wave  
superimposed on rated load(JEDEC method)  
Maximum Forward Voltage at 3.0A ( Note 1)  
0.70  
0.74  
0.80  
0.90  
V
Maximum DC Reverse Current TJ=25OC  
at Rated DC Blocking Voltage TJ=100OC  
0.05  
20  
IR  
mA  
RθJL  
RθJA  
20  
75  
Typical Thermal Resistance ( Note 2)  
OC / W  
OC  
Operating Junction and Storage Temperature  
Range  
-55 to +150  
TJ ,TS T G  
-65 to +175  
NOTES:  
1. Pulse Test with PW =300µsec, 1% Duty Cycle.  
2. Mounted on P.C. Board with 8.0mm2 (.013mm thick) copper pad areas.  
PAGE . 1  
STAD-APR.28.2009  

与BD3100S相关器件

型号 品牌 获取价格 描述 数据表
BD3100T PANJIT

获取价格

THROUGH HOLE SCHOTTKY BARRIER RECTIFIERS
BD3100YS PANJIT

获取价格

THROUGH HOLE SCHOTTKY BARRIER RECTIFIERS
BD3100YT PANJIT

获取价格

THROUGH HOLE SCHOTTKY BARRIER RECTIFIERS
BD311 ISC

获取价格

Silicon NPN Power Transistors
BD311 SAVANTIC

获取价格

Silicon NPN Power Transistors
BD311 MOTOROLA

获取价格

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
BD311 NJSEMI

获取价格

Trans GP BJT NPN 60V 10A
BD311NPN MOTOROLA

获取价格

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
BD312 MOTOROLA

获取价格

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
BD312 SAVANTIC

获取价格

Silicon PNP Power Transistors