Datasheet > BD311

BD311

更新时间： 2024-11-23 06:41:51

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	117K
描述
Silicon NPN Power Transistors

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BD311 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BD311

DESCRIPTION

·With TO-3 package

·High DC current gain

·Excellent safe operating area

·Complement to type BD312

APPLICATIONS

·Designed for power amplifier applications

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

UNIT

Open emitter

Open base

Open collector

I_CM

Collector current(peak)

Base current

I_B

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

115

℃

T_j

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance from junction to case

1.52

℃/W

12 3

中文翻译

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与BD311相关器件

型号	品牌	获取价格	描述	数据表
BD311NPN	MOTOROLA	获取价格	10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
BD312	MOTOROLA	获取价格	10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
BD312	SAVANTIC	获取价格	Silicon PNP Power Transistors
BD312	ISC	获取价格	Silicon PNP Power Transistors
BD312	NJSEMI	获取价格	Trans GP BJT PNP 60V 10A
BD312PNP	MOTOROLA	获取价格	10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
BD313	ISC	获取价格	isc Silicon NPN Power Transistor
BD314	ISC	获取价格	Silicon PNP Power Transistor
BD314	NJSEMI	获取价格	Trans GP BJT PNP 80V 10A
BD315	MOTOROLA	获取价格	16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS