Datasheet > BD312

BD312

更新时间： 2024-10-01 08:51:19

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	110K
描述
Silicon PNP Power Transistors

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BD312 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

BD312

DESCRIPTION

·With TO-3 package

·High DC current gain

·Excellent safe operating area

·Complement to type BD311

APPLICATIONS

·Designed for power amplifier applications

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-60

UNIT

Open emitter

Open base

-60

Open collector

-5

-10

I_CM

Collector current(peak)

Base current

-20

I_B

-4

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

115

ꢀ

T_j

-65~200

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance from junction to case

1.52

ꢀ/W

12 3

中文翻译

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BD315	MOTOROLA	获取价格	16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
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BD3150L50100A00	ANAREN	获取价格	Ultra Small Low Profile 0603 Balun 50ヘ to 100
BD3150L50100AHF	ANAREN	获取价格	RF Transformer 1: 1.41 6 Terminal SMD
BD3150L50200A00	ANAREN	获取价格	Ultra Small Low Profile 0603 Balun 50ヘ to 200
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