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BD314 PDF预览

BD314

更新时间: 2024-11-23 06:41:51
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 193K
描述
Silicon PNP Power Transistor

BD314 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Is Samacsys:NBase Number Matches:1

BD314 数据手册

 浏览型号BD314的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
BD314  
DESCRIPTION  
·Excellent Safe Operating Area  
·DC Current Gain-hFE= 25(Min.)@IC = -4A  
·Collector-Emitter Saturation Voltage-  
: VCE(sat)= -1.0 V(Max)@ IC = -5A  
·Complement to Type BD313  
APPLICATIONS  
·Designed for high quality amplifiers operating up to 60 watts  
into 4 ohm load.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
VALUE  
-80  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-80  
V
-5  
V
Collector Current-Continuous  
Collector Current-Peak  
-10  
A
ICM  
-20  
A
IB  
Base Current-Continuous  
Collector Power Dissipation@TC=25  
Junction Temperature  
-4  
A
PC  
115  
W
TJ  
200  
-65~200  
Storage Temperature  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.52  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  
1

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