Datasheet > BD317

BD317

更新时间： 2024-09-24 06:41:51

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	110K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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BD317 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BD317

DESCRIPTION

·With TO-3 package

·High DC current gain

·Excellent safe operating area

·Complement to type BD318

APPLICATIONS

·Designed for high power amplifiers

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

100

UNIT

Open emitter

Open base

100

Open collector

I_CM

Collector current(peak)

Base current

I_B

P_D

Total power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

200

ꢀ

T_j

-65~200

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance from junction to case

0.875

ꢀ/W

12 3

中文翻译

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