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BD2506-LF PDF预览

BD2506-LF

更新时间: 2024-02-08 23:28:16
品牌 Logo 应用领域
WTE 二极管
页数 文件大小 规格书
2页 41K
描述
Rectifier Diode, 1 Phase, 1 Element, 25A, 600V V(RRM), Silicon, ROHS COMPLIANT, PRESSFIT-1

BD2506-LF 技术参数

生命周期:Obsolete包装说明:O-XUPF-P1
针数:1Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.71其他特性:LOW LEAKAGE CURRENT
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-XUPF-P1
最大非重复峰值正向电流:300 A元件数量:1
相数:1端子数量:1
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:25 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:PRESS FIT
最大重复峰值反向电压:600 V表面贴装:NO
端子形式:PIN/PEG端子位置:UPPER
Base Number Matches:1

BD2506-LF 数据手册

 浏览型号BD2506-LF的Datasheet PDF文件第2页 
WTE  
POWER SEMICONDUCTORS  
BD2500 – BD2506  
25A BOSCH TYPE PRESS-FIT DIODE  
Features  
Diffused Junction  
Low Leakage  
Low Cost  
High Surge Current Capability  
Typical IR less than 5.0µA  
Anode +  
C
13mm Bosch  
Mechanical Data  
D
E
Dim  
A
Min  
12.80  
9.40  
Max  
13.20  
Case: 13mm Bosch Type Press-Fit  
B
Terminals: Contact Areas Readily Solderable  
Polarity: Cathode to Case (Reverse Units Are  
Available Upon Request and Are Designated  
By A “R” Suffix, i.e. BD2502R or BD2504R)  
Polarity: Red Color Equals Standard,  
Black Color Equals Reverse Polarity  
B
C
1.25  
1.31  
D
28.00  
9.90  
E
11.10  
A
All Dimensions in mm  
Mounting Position: Any  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 2  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol BD2500 BD2501 BD2502 BD2503 BD2504 BD2505 BD2506 Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
300  
400  
280  
500  
350  
600  
420  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
210  
25  
V
A
Average Rectified Output Current @TC = 150°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
300  
1.0  
A
Forward Voltage  
@IF = 25A  
VFM  
IRM  
V
Peak Reverse Current  
@TA = 25°C  
5.0  
500  
µA  
At Rated DC Blocking Voltage  
@TA = 100°C  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
Operating and Storage Temperature Range  
Cj  
300  
1.2  
pF  
°C/W  
°C  
RθJC  
TJ, TSTG  
-65 to +175  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Thermal Resistance: Junction to case, single side cooled.  
BD2500 – BD2506  
1 of 2  
© 2006 Won-Top Electronics  

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