Datasheet > BD250A

BD250A

更新时间： 2024-11-03 22:39:31

品牌	Logo	应用领域
POINN		晶体晶体管
页数	文件大小	规格书
6页	97K
描述
PNP SILICON POWER TRANSISTORS

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BD250A 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.84
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	25 A
集电极-发射极最大电压：	60 V	配置：	SINGLE
最小直流电流增益 (hFE)：	5	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON

BD250A 数据手册

BD250, BD250A, BD250B, BD250C

PNP SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

●

Designed for Complementary Use with the

BD249 Series

SOT-93 PACKAGE

(TOP VIEW)

●

125 W at 25°C Case Temperature

25 A Continuous Collector Current

40 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD250

-55

BD250A

BD250B

BD250C

BD250

-70

Collector-emitter voltage (R_BE= 100 W)

V_CER

-90

-115

-45

BD250A

BD250B

BD250C

-60

Collector-emitter voltage (I_C= -30 mA)

V_CEO

-80

-100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

-5

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

-25

-40

-5

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

125

°C

½LI_C

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

250

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p£ 0.3 ms, duty cycle £ 10%.

2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= -0.4 A, R_BE= 100 W,

V_BE(off)= 0, R_S= 0.1 W, V_CC= -20 V.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

中文翻译

下载PDF

与BD250A相关器件

型号	品牌	获取价格	描述	数据表
BD250A-S	BOURNS	获取价格	Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
BD250B	BOURNS	获取价格	PNP SILICON POWER TRANSISTORS
BD250B	SAVANTIC	获取价格	Silicon PNP Power Transistors
BD250B	MOSPEC	获取价格	POWER TRANSISTORS(25A,125W)
BD250B	POINN	获取价格	PNP SILICON POWER TRANSISTORS
BD250B	NJSEMI	获取价格	Trans GP BJT PNP 80V 25A 3-Pin(3+Tab) SOT-93
BD250B-S	BOURNS	获取价格	Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
BD250C	BOURNS	获取价格	PNP SILICON POWER TRANSISTORS
BD250C	MOSPEC	获取价格	POWER TRANSISTORS(25A,125W)
BD250C	POINN	获取价格	PNP SILICON POWER TRANSISTORS

与BD250A相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

31
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

30

产品中心

服务支持

精选活动

关于我们

帮助中心

BD250A

BD250A 技术参数

BD250A 数据手册

与BD250A相关器件

与BD250A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BD250A

BD250A 技术参数

BD250A 数据手册

与BD250A相关器件

与BD250A相关文章

您还可以找

您在本页遇到什么问题？