Datasheet > BD243BBA

BD243BBA

更新时间： 2024-11-05 04:00:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
61页	362K
描述
6A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

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数据手册

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BD243BBA 数据手册

SEMICONDUCTOR TECHNICAL DATA

. . . designed for use in general purpose amplifier and switching applications.

•

Collector – Emitter Saturation Voltage —

= 1.5 Vdc (Max) @ I = 6.0 Adc

Collector Emitter Sustaining Voltage —

CE(sat)

•

= 80 Vdc (Min) — BD243B, BD244B

= 100 Vdc (Min) — BD243C, BD244C

CEO(sus)

*Motorola Preferred Device

•

High Current Gain Bandwidth Product

= 3.0 MHz (Min) @ I = 500 mAdc

6 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

Compact TO–220 AB Package

MAXIMUM RATINGS

80–100 VOLTS

65 WATTS

BD243B

BD244B

BD243C

BD244C

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

100

5.0

Collector Current — Continuous

Peak

Base Current

2.0

Adc

Total Device Dissipation

Watts

@ T = 25 C

0.52

Derate above 25 C

W/ C

CASE 221A–06

TO–220AB

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.92

C/W

θJC

100

120

140

160

T , CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

3–178

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...61

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