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BD243BBA PDF预览

BD243BBA

更新时间: 2024-11-27 04:00:11
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
61页 362K
描述
6A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

BD243BBA 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use in general purpose amplifier and switching applications.  
Collector – Emitter Saturation Voltage —  
= 1.5 Vdc (Max) @ I = 6.0 Adc  
Collector Emitter Sustaining Voltage —  
V
CE(sat)  
C
V
V
= 80 Vdc (Min) — BD243B, BD244B  
= 100 Vdc (Min) — BD243C, BD244C  
CEO(sus)  
CEO(sus)  
*Motorola Preferred Device  
High Current Gain Bandwidth Product  
f
= 3.0 MHz (Min) @ I = 500 mAdc  
T
C
6 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
Compact TO–220 AB Package  
MAXIMUM RATINGS  
80100 VOLTS  
65 WATTS  
BD243B  
BD244B  
BD243C  
BD244C  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
80  
80  
100  
100  
V
CB  
V
5.0  
EB  
Collector Current — Continuous  
Peak  
I
6
10  
C
Base Current  
I
B
2.0  
Adc  
Total Device Dissipation  
P
Watts  
D
@ T = 25 C  
65  
0.52  
C
Derate above 25 C  
W/ C  
C
CASE 221A–06  
TO–220AB  
Operating and Storage Junction  
Temperature Range  
T , T  
J
65 to +150  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
1.92  
C/W  
θJC  
80  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
3–178  
Motorola Bipolar Power Transistor Device Data  

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