BD243C

更新时间： 2024-11-25 22:48:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	143K
描述
POWER TRANSISTORS COMPLEMENTARY SILICON

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中文翻译

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数据手册
替代型号

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BD243C 数据手册

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by BD243B/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for use in general purpose amplifier and switching applications.

•

Collector – Emitter Saturation Voltage —

= 1.5 Vdc (Max) @ I = 6.0 Adc

Collector Emitter Sustaining Voltage —

CE(sat)

•

= 80 Vdc (Min) — BD243B, BD244B

= 100 Vdc (Min) — BD243C, BD244C

CEO(sus)

*Motorola Preferred Device

•

High Current Gain Bandwidth Product

= 3.0 MHz (Min) @ I = 500 mAdc

6 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

Compact TO–220 AB Package

MAXIMUM RATINGS

80–100 VOLTS

65 WATTS

BD243B

BD244B

BD243C

BD244C

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

100

5.0

Collector Current — Continuous

Peak

Base Current

2.0

Adc

Total Device Dissipation

Watts

@ T = 25 C

0.52

Derate above 25 C

W/ C

CASE 221A–06

TO–220AB

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.92

C/W

θJC

100

120

140

160

, CASE TEMPERATURE (

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

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BD243C 替代型号

型号	品牌	替代类型	描述	数据表
D45C11	ONSEMI	类似代替	PNP 电流驱动器晶体管
BD244A	ONSEMI	类似代替	PNP外延硅晶体管
BD244BG	ONSEMI	类似代替	Complementary Silicon Plastic Power Transistors

与BD243C相关器件

型号	品牌	获取价格	描述	数据表
BD243C_07	STMICROELECTRONICS	获取价格	Complementary power transistors
BD243C16	MOTOROLA	获取价格	6A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD243C16A	MOTOROLA	获取价格	Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD243C-6200	RENESAS	获取价格	7A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD243C-6203	RENESAS	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD243C-6226	RENESAS	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD243C-6255	RENESAS	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD243C-6258	RENESAS	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD243C-6261	RENESAS	获取价格	7A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD243C-6263	RENESAS	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast