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BD243C PDF预览

BD243C

更新时间: 2024-11-25 22:48:19
品牌 Logo 应用领域
统懋 - MOSPEC 晶体晶体管
页数 文件大小 规格书
3页 131K
描述
POWER TRANSISTORS(6A,65W)

BD243C 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
最大集电极电流 (IC):8 A配置:Single
最小直流电流增益 (hFE):30最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):65 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

BD243C 数据手册

 浏览型号BD243C的Datasheet PDF文件第2页浏览型号BD243C的Datasheet PDF文件第3页 
A

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Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
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Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD243C-6255 RENESAS

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Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD243C-6258 RENESAS

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Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD243C-6261 RENESAS

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7A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD243C-6263 RENESAS

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Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast