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BD243BBG PDF预览

BD243BBG

更新时间: 2024-11-04 20:43:55
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
6页 87K
描述
6A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

BD243BBG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.69
外壳连接:COLLECTOR最大集电极电流 (IC):6 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):15JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

BD243BBG 数据手册

 浏览型号BD243BBG的Datasheet PDF文件第2页浏览型号BD243BBG的Datasheet PDF文件第3页浏览型号BD243BBG的Datasheet PDF文件第4页浏览型号BD243BBG的Datasheet PDF文件第5页浏览型号BD243BBG的Datasheet PDF文件第6页 
BD243B, BD243C (NPN),  
BD244B, BD244C (PNP)  
Complementary Silicon  
Plastic Power Transistors  
These devices are designed for use in general purpose amplifier and  
switching applications.  
http://onsemi.com  
Features  
6 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
80−100 VOLTS  
High Current Gain Bandwidth Product  
These Devices are Pb−Free and are RoHS Compliant*  
MAXIMUM RATINGS  
65 WATTS  
Rating  
Symbol  
Value  
Unit  
PNP  
NPN  
Collector−Emitter Voltage  
BD243B, BD244B  
V
CEO  
Vdc  
COLLECTOR 2, 4  
COLLECTOR 2, 4  
80  
BD243C, BD244C  
100  
Collector−Base Voltage  
BD243B, BD244B  
BD243C, BD244C  
V
CB  
Vdc  
1
1
80  
100  
BASE  
BASE  
Emitter−Base Voltage  
Collector Current − Continuous  
Collector Current − Peak  
Base Current  
V
5.0  
6
Vdc  
Adc  
Adc  
Adc  
EB  
EMITTER 3  
EMITTER 3  
I
C
4
I
10  
2.0  
CM  
I
B
TO−220  
CASE 221A  
STYLE 1  
Total Device Dissipation  
P
D
@ T = 25°C  
65  
0.52  
W
W/°C  
C
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
°C  
J
stg  
1
2
3
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MARKING DIAGRAM  
BD24xy = Device Code  
x = 3 or 4  
THERMAL CHARACTERISTICS  
y = B or C  
Assembly Location  
Year  
Work Week  
Pb−Free Package  
Characteristics  
Symbol  
Max  
Unit  
BD24xyG  
AY WW  
A
Y
WW  
G
=
=
=
=
Thermal Resistance, Junction−to−Case  
R
1.92  
°C/W  
q
JC  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BD243BG  
BD243CG  
BD244BG  
BD244CG  
TO−220  
(Pb−Free)  
50 Units / Rail  
50 Units / Rail  
50 Units / Rail  
50 Units / Rail  
TO−220  
(Pb−Free)  
TO−220  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
TO−220  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
September, 2013 − Rev. 14  
BD243B/D  

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