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BD243BAS PDF预览

BD243BAS

更新时间: 2024-02-11 23:15:56
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
61页 362K
描述
6A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

BD243BAS 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.89
外壳连接:COLLECTOR最大集电极电流 (IC):6 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):15JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz

BD243BAS 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use in general purpose amplifier and switching applications.  
Collector – Emitter Saturation Voltage —  
= 1.5 Vdc (Max) @ I = 6.0 Adc  
Collector Emitter Sustaining Voltage —  
V
CE(sat)  
C
V
V
= 80 Vdc (Min) — BD243B, BD244B  
= 100 Vdc (Min) — BD243C, BD244C  
CEO(sus)  
CEO(sus)  
*Motorola Preferred Device  
High Current Gain Bandwidth Product  
f
= 3.0 MHz (Min) @ I = 500 mAdc  
T
C
6 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
Compact TO–220 AB Package  
MAXIMUM RATINGS  
80100 VOLTS  
65 WATTS  
BD243B  
BD244B  
BD243C  
BD244C  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
80  
80  
100  
100  
V
CB  
V
5.0  
EB  
Collector Current — Continuous  
Peak  
I
6
10  
C
Base Current  
I
B
2.0  
Adc  
Total Device Dissipation  
P
Watts  
D
@ T = 25 C  
65  
0.52  
C
Derate above 25 C  
W/ C  
C
CASE 221A–06  
TO–220AB  
Operating and Storage Junction  
Temperature Range  
T , T  
J
65 to +150  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
1.92  
C/W  
θJC  
80  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
3–178  
Motorola Bipolar Power Transistor Device Data  

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