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BD243B PDF预览

BD243B

更新时间: 2024-11-03 22:48:19
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
6页 143K
描述
Complementary Silicon Plastic Power Transistors

BD243B 数据手册

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Order this document  
by BD243B/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use in general purpose amplifier and switching applications.  
Collector – Emitter Saturation Voltage —  
= 1.5 Vdc (Max) @ I = 6.0 Adc  
Collector Emitter Sustaining Voltage —  
V
CE(sat)  
C
V
V
= 80 Vdc (Min) — BD243B, BD244B  
= 100 Vdc (Min) — BD243C, BD244C  
CEO(sus)  
CEO(sus)  
*Motorola Preferred Device  
High Current Gain Bandwidth Product  
f
= 3.0 MHz (Min) @ I = 500 mAdc  
T
C
6 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
Compact TO–220 AB Package  
MAXIMUM RATINGS  
80100 VOLTS  
65 WATTS  
BD243B  
BD244B  
BD243C  
BD244C  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
80  
80  
100  
100  
V
CB  
V
5.0  
EB  
Collector Current — Continuous  
Peak  
I
6
10  
C
Base Current  
I
B
2.0  
Adc  
Total Device Dissipation  
P
Watts  
D
@ T = 25 C  
65  
0.52  
C
Derate above 25 C  
W/ C  
C
CASE 221A–06  
TO–220AB  
Operating and Storage Junction  
Temperature Range  
T , T  
J
65 to +150  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
1.92  
C/W  
θJC  
80  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
C)  
140  
160  
T
, CASE TEMPERATURE (  
°
C
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
Motorola, Inc. 1995

BD243B 替代型号

型号 品牌 替代类型 描述 数据表
BD244A ONSEMI

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BD244B ONSEMI

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