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BD243B/D PDF预览

BD243B/D

更新时间: 2024-11-25 23:35:07
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 62K
描述
Complementary Silicon Plastic Power Transistors

BD243B/D 数据手册

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ON Semiconductort  
NPN  
BD243B  
Complementary Silicon Plastic  
Power Transistors  
. . . designed for use in general purpose amplifier and switching  
applications.  
*
*
BD243C  
PNP  
BD244B  
Collector – Emitter Saturation Voltage —  
V
CE(sat)  
= 1.5 Vdc (Max) @ I = 6.0 Adc  
C
BD244C  
Collector Emitter Sustaining Voltage —  
V
= 80 Vdc (Min) — BD243B, BD244B  
CEO(sus)  
*ON Semiconductor Preferred Device  
= 100 Vdc (Min) — BD243C, BD244C  
High Current Gain Bandwidth Product  
6 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
f = 3.0 MHz (Min) @ I = 500 mAdc  
T
C
Compact TO–220 AB Package  
80–100 VOLTS  
65 WATTS  
MAXIMUM RATINGS  
BD243B  
BD244B  
BD243C  
BD244C  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
80  
80  
100  
100  
V
CB  
EB  
V
5.0  
Collector Current — Continuous  
Peak  
I
C
6
10  
Base Current  
I
B
2.0  
Adc  
Total Device Dissipation  
P
D
Watts  
@ T = 25_C  
C
65  
0.52  
Derate above 25_C  
W/_C  
_C  
CASE 221A–06  
TO–220AB  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to +150  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
1.92  
_C/W  
θ
JC  
80  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
1
Semiconductor Components Industries, LLC, 2001  
Publication Order Number:  
March, 2001 – Rev. 9  
BD243B/D  

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